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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3944 2SC3944A DESCRIPTION *With TO-220Fa package *Complement to type 2SA1535/1535A *High transition frequency APPLICATIONS *For low-frequency driver and high power amplification *Optimum for the driver-stage of a 60W to 100W output amplifier PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION * Absolute maximum ratings (Ta=25) SYMBOL PARAMETER 2SC3944 VCBO Collector-base voltage 2SC3944A 2SC3944 VCEO Collector-emitter voltage 2SC3944A VEBO IC ICM Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 15 150 -55~150 Open collector Open base 180 5 1.0 1.5 2.0 W V A A Open emitter 180 150 V CONDITIONS VALUE 150 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER 2SC3944 V(BR)CEO Collector-emitter breakdown voltage 2SC3944A V(BR)EBO VCEsat VBEsat Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage 2SC3944 ICBO Collector cut-off current 2SC3944A hFE-1 hFE-2 fT COB DC current gain DC current gain Transition frequency Output capacitance VCB=180V; IE=0 IC=150mA ; VCE=10V IC=500mA ; VCE=5V IC=50mA ; VCB=10V IE=0; VCB=10V;f=1MHz IE=10A; IC=0 IC=0.5 A;IB=50m A IC=0.5 A;IB=50m A VCB=150V; IE=0 IC=1mA; IB=0 CONDITIONS 2SC3944 2SC3944A MIN 150 TYP. MAX UNIT V 180 5 2.0 2.0 V V V 10 A 95 50 200 30 220 MHz pF hFE classifications Q 95-155 R 130-220 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3944 2SC3944A Fig.2 Outline dimensions (unindicated tolerance:0.15 mm) 3 |
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